A Robust and Low‐Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments-Reference-Cited by-同舟云学术

A Robust and Low‐Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments

Published:2020-10-14 Issue:46 Volume:16 Page:2004619
ISSN:1613-6810
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Author:

Liu Yanxin¹,Ye Cong¹^ORCID,Chang Kuan‐Chang²,Li Lei²,Jiang Bei¹,Xia Chen¹,Liu Lei¹,Zhang Xin¹,Liu Xinyi¹,Xia Tian¹,Peng Zehui¹,Cao Guangsen¹,Cheng Gong¹,Ke Shanwu¹,Wang Jiahong³

Affiliation:

1. Faculty of Physics and Electronic Science Hubei University Hubei Key Laboratory of Ferro‐& Piezoelectric Materials and Devices Wuhan 430062 P. R. China

2. School of Electronic and Computer Engineering Peking University Shenzhen Graduate School Shenzhen 518055 P. R. China

3. Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 P. R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

State Key Laboratory on Integrated Optoelectronics

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202004619