Ab initio study of oxygen vacancy filament formation at Ta/HfO2 interface-Reference-Cited by-同舟云学术

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Ab initio study of oxygen vacancy filament formation at Ta/HfO2 interface

Published:2024-06 Issue: Volume:49 Page:104418
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Zhang Dong-lan,Wang Jiong,Wu Qing,Du Yong,Holec David^ORCID

Funder

National Natural Science Foundation of China

Hunan Provincial Natural Science Foundation

National Key Research and Development Program of China

Natural Science Foundation of Henan Province

Central South University

National Key Research and Development Program of China Stem Cell and Translational Research

China Scholarship Council

Publisher

Elsevier BV

Reference63 articles.

1. Self-organization of an inhomogeneous memristive hardware for sequence learning;Payvand;Nat. Commun.,2022

2. A compute-in-memory chip based on resistive random-access memory;Wan;Nature,2022

3. A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation;Wang;Science,2013

4. Hafnium oxide (HfO2)-a multifunctional oxide: a review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories;Banerjee;Small,2022

5. A robust and low-power bismuth doped tin oxide memristor derived from coaxial conductive filaments;Liu;Small,2020

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