Characterization of ultra-thin nickel–silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)-Reference-Cited by-同舟云学术

Characterization of ultra-thin nickel–silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)

Published:2016-05 Issue: Volume:157 Page:52-59
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Peter Antony Premkumar,Yu Hao,Dutta Shibesh,Rosseel Erik,Van Elshocht Sven,Paulussen Kris,Moussa A.,Vaesan Inge,Schaekers Marc

Funder

imec core CMOS program members

Publisher

Elsevier BV

Reference47 articles.

1. Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices

2. Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors

3. Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: II. The CDE features

4. Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: I. The elementary process steps

5. Selective Epitaxial Si:P Film for nMOSFET Application: High Phosphorous Concentration and High Tensile Strain

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1. Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study;Applied Physics Letters;2025-03-01

2. Growth of low resistive nickel mono-silicide phase under low energy Si ion irradiation at room temperature;Thin Solid Films;2021-09

3. Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing;Applied Physics Express;2021-01-12

4. Dopant Activation of In Situ Phosphorus‐Doped Silicon Using Multi‐Pulse Nanosecond Laser Annealing;physica status solidi (a);2020-03-05

5. Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films;physica status solidi (a);2019-01-24