Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices-Reference-Cited by-同舟云学术

Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices

Published:2012-02 Issue:8 Volume:520 Page:3149-3154
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Loubet Nicolas,Adam Thomas,Raymond Mark,Liu Qing,Cheng Kangguo,Sreenivasan Raghavasimhan,Reznicek Alexander,Khare Prasanna,Kleemeier Walter,Paruchuri Vamsi,Doris Bruce,Sampson Ron

Publisher

Elsevier BV

Reference29 articles.

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4. Strain Enhanced nMOS Using In Situ Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process

5. Strained-SOI n-Channel Transistor With Silicon–Carbon Source/Drain Regions for Carrier Transport Enhancement

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