Effect of RuO2 electrode on laser-MBE prepared HfO2 gate dielectrics
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Elsevier BV
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO 2 Stack;Chinese Physics Letters;2008-05-29
2. Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface;Journal of Applied Physics;2007-02
3. Ultrahigh Electron Emissive Carbon Nanotubes with Nano-sized RuO2 Particles Deposition;Journal of Nanoparticle Research;2007-01-11
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