Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO <sub>2</sub> Stack-Reference-Cited by-同舟云学术

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Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO ₂ Stack

Published:2008-05-29 Issue:6 Volume:25 Page:2190-2193
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Ran Jiang,Li-Ting Yao

Publisher

IOP Publishing

Link

https://iopscience.iop.org/article/10.1088/0256-307X/25/6/073/pdf

Reference12 articles.

1. The electronic structure at the atomic scale of ultrathin gate oxides

2. Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors

3. Effect of RuO2 electrode on laser-MBE prepared HfO2 gate dielectrics

4. Comparison of metal gate electrodes on MOCVD HfO2

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology;Applied Physics Letters;2024-05-13

2. Theoretical study of the elastic properties of titanium nitride;Acta Metallurgica Sinica (English Letters);2009-04

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