Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs-Reference-Cited by-同舟云学术

Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs

Published:2009-08 Issue:8 Volume:49 Page:892-896
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hsieh Zhen-Ying,Wang Mu-Chun,Chen Chih,Shieh Jia-Min,Lin Yu-Ting,Chen Shuang-Yuan,Huang Heng-Sheng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. A Current Estimation Method for Bias-Temperature Stress of a-Si TFT Device

2. Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxide

3. Hot-carrier-induced degradation of LDD polysilicon TFTs

4. Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide

5. Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation

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1. Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers;Japanese Journal of Applied Physics;2011-04-20

2. Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers;Japanese Journal of Applied Physics;2011-04-01