A Current Estimation Method for Bias-Temperature Stress of a-Si TFT Device
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx5/7298/4295073/04295101.pdf?arnumber=4295101
Reference16 articles.
1. Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress
2. Accelerated Stress Testing of a-Si:H Pixel Circuits for AMOLED Displays
3. Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors
4. Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias
5. Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays
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