Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure

Published:2017-11 Issue: Volume:725 Page:984-997
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Tongbram Binita,Mandal Arjun,Sengupta Saumya,Chakrabarti Subhananda^ORCID

Funder

Centre of Excellence in Nanoelectronics

Department of Information and Technology

National Center of Excellence in Technology for Internal Security

IIT Bombay

IITBNF

Indian Space Research Organization (ISRO)

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference30 articles.

1. Intermediate band solar cells: recent progress and future directions;Okada;Appl. Phys. Rev.,2015

2. Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation;Stephan;Appl. Phys. Lett.,2016

3. Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors;Tongbram;Appl. Phys. A,2015

4. Role of charge separation on two-step two photon absorption in InAs/GaAs quantum dot intermediate band solar cells;Creti;Appl. Phys. Lett.,2016

5. Strain engineering of quantum dots for long wavelength emission: photoluminescence from self-assembled InAs quantum dots grown on GaAs (001) at wavelengths over 1.55 μm;Shimomura;Appl. Phys. Lett.,2015

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property;Materials Science in Semiconductor Processing;2024-09

2. A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction;Journal of Crystal Growth;2024-03

3. Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources;Journal of Alloys and Compounds;2023-10

4. InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer;Current Applied Physics;2023-03

5. Subsiding strain-induced In-Ga intermixing in InAs/In Ga1−As sub-monolayer quantum dots for room temperature photodetectors;Infrared Physics & Technology;2022-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3