Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation-Reference-Cited by-同舟云学术

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Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation

Published:2016-02-22 Issue:8 Volume:108 Page:082107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stephan D.¹²,Bhattacharyya J.¹,Huo Y. H.³⁴,Schmidt O. G.³,Rastelli A.³⁴,Helm M.¹²,Schneider H.¹

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

2. Technische Universität Dresden, 01062 Dresden, Germany

3. Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany

4. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstraße 69, 4040 Linz, Austria

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942893

Reference23 articles.

1. Phonon-Assisted Population Inversion of a SingleInGaAs/GaAsQuantum Dot by Pulsed Laser Excitation

2. Deterministic Writing and Control of the Dark Exciton Spin Using Single Short Optical Pulses

3. All-optical depletion of dark excitons from a semiconductor quantum dot

4. Room temperature midinfrared electroluminescence from InAs quantum dots

5. Quantum dot infrared photodetectors

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1. Weakly confined silicon nanodiscs as material system for THz absorption: analytical study;Physica Scripta;2024-02-16

2. Effect of Be doping in active regions on the performance of 1.3 μm InAs quantum dot lasers;J INFRARED MILLIM W;2023

3. Effect of the hydrostatic pressure and shell’s Al composition in the intraband absorption coefficient for core/shell spherical GaAs/AlxGa1−xAs quantum dots;Materials Science in Semiconductor Processing;2020-03

4. Indirect to direct exciton transition by laser irradiance in a type II core/ shell quantum dot;Materials Science in Semiconductor Processing;2019-11

5. Impact of an InxGa1–xAs Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces;ACS Applied Nano Materials;2018-07-17

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