Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Author:

Li Rui,Wang Chengxin,Shi Kaiju,Li Changfu,Qu Shangda,Xu Xiangang,Ji Ziwu

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference38 articles.

1. Investigation of Forward Tunneling Characteristics of InGaN/GaN blue light-emitting diodes on freestanding GaN detached from a Si substrate;Lee;Nanomaterials,2018

2. Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations;Auf der Maur;Phys. Rev. Lett.,2016

3. Orange-red-emitting Sm3+-doped double perovskite CaY0.5Ta0.5O3 phosphor with highly thermal stability for white LED applications;Ke;J. Lumin.,2020

4. Single phase white LED phosphor Ca3YAl3B4O15: Ce3+, Tb3+, Sm3+ with superior performance: color-tunable and energy transfer study;Khan;Chem. Eng. J.,2021

5. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content, Chin;Li;Phys. B,2021

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