Influence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Influence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells

Published:2023-05 Issue: Volume:177 Page:207544
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Shi Kaiju,Wang Chengxin,Li Rui,Deng Jianyang,Sun Haofeng,Xu Xiangang,Ji Ziwu

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference31 articles.

1. Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes;Zhao;Appl. Phys. Lett.,2021

2. Temperature dependence of the Auger recombination coefficient in InGaN/GaN multiple-quantum-well light-emitting diodes;Ryu;Opt Express,2020

3. Polarisation fields in III-nitrides: effects and control;Ren;Mater. Sci. and Tech-lond,2016

4. InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate;Lee;ACS Photonics,2018

5. Compositional instability in strained InGaN epitaxial layers induced by kinetic effects;Huang;J. Appl. Phys.,2011

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure;Advanced Photonics Research;2023-05-26

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP