Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction-Reference-Cited by-同舟云学术

Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction

Published:2020-07 Issue: Volume:223 Page:117225
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Shi Kaiju,Li Hongbin,Xu Mingsheng,Li Changfu,Wei Yehui,Xu Xiangang,Ji Ziwu

Funder

National Natural Science Foundation of China

Major Research Plan

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference47 articles.

1. Elastically frustrated rehybridization: origin of chemical order and compositional limits in InGaN quantum wells;Lymperakis;Phys. Rev. Mater.,2018

2. Status and future of high-power light-emitting diodes for solid-state lighting;Krames;Sci. Rep.,2017

3. Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition;Ra;Nano Lett.,2014

4. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays;DenBaars;Acta Mater.,2003

5. Polarisation fields in III-nitrides: effects and control;Ren;J. Disp. Technol.,2007

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode;ECS Journal of Solid State Science and Technology;2024-05-01

2. The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number;Physica B: Condensed Matter;2022-04

3. Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN;Journal of Luminescence;2022-04

4. Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells;Materials Express;2021-12-01

5. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures;Superlattices and Microstructures;2021-12