Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region-Reference-Cited by-同舟云学术

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Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region

Published:2024-10 Issue: Volume:220 Page:108987
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Heon Shin Seung,Kim Do-Kywn,Bae Sung-bum,Lee Hyung-Seok,Lee Jung-Hee,Kim Dong-Seok

Publisher

Elsevier BV

Reference28 articles.

1. Challenges for energy efficient wide band gap semiconductor power devices;Roccaforte;Physica Status Solidi (a),2014

2. Gate injection transistor (git)—a normally-off AlGaN/GaN power transistor using conductivity modulation;Uemoto;IEEE Trans Electron Devices,2007

3. Normally off Algan/Gan Metal–2DEG tunnel-junction field-effect transistors;Yuan;IEEE Electron Device Lett,2011

4. Enhancement-mode gan mis-hemts with N-gan/I-aln/n-gan triple cap layer and high- $k$ Gate Dielectrics;Kanamura;IEEE Electron Device Lett,2010

5. Recessed-gate normally-off GaN MOSFET technologies;Im;Int J High Speed Electron Syst,2012

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