On the mechanism of high-temperature quenching of the copper-induced luminescence in p-type GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Recombination and Trapping Processes at Deep Centers in N-Type GaAs
2. The role of acceptors in the luminescence of n-type GaAs
3. Temperature Dependence of Photoluminescence in Cadmium‐Doped Epitaxial GaAs
4. Über die rolle von versetzungen bei der diffusion von kupfer in thermisch konvertiertem galliumarsenid
5. A photoluminescence study of acceptor centres in gallium arsenide
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Luminescence studies of the 1.36‐eV band and the edge emission in melt‐grown GaAs : Cu;Journal of Applied Physics;1979-05
2. Temperature quenching of the copper-induced 1.35 eV emission band in p-GaAs;Physica Status Solidi (a);1974-09-16
3. Chapter 5 Photoluminescence II: Gallium Arsenide;Semiconductors and Semimetals;1972
4. On the mechanism of temperature quenching of the copper-induced 1.35 eV luminescence band in GaAs;Physica Status Solidi (a);1971-06-16
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