The role of acceptors in the luminescence of n-type GaAs
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference10 articles.
1. Band Structure and Transport Properties of Some 3–5 Compounds
2. RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p‐n JUNCTIONS
3. Optical Transitions Involving Impurities in Semiconductors
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Injection‐level dependence, frequency response, and thermal quenching of the 1.39‐eV luminescence in Sn‐doped LPE GaAs;Journal of Applied Physics;1977-11
2. The scheme of electronic transitions via 0.94, 1.0, 1.2, and 1.3 eV radiative centres in n-GaAs;Physica Status Solidi (a);1977-06-16
3. Improved properties of melt‐grown GaAs by short‐time heat treatment;Journal of Applied Physics;1977-04
4. The internal radiative efficiency and the mechanism of temperature quenching of the 1.03, 1.20, and 1.30 eV emission bands in n-GaAs;Physica Status Solidi (a);1976-04-16
5. The characteristics of the copper-induced 1.35 eV emission band in p-GaAs;Physica Status Solidi (a);1975-05-16
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