Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

Published:2023-01 Issue: Volume:602 Page:126982
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bakhtiary-Noodeh Marzieh,Detchprohm Theeradetch,Dupuis Russell D.

Funder

National Science Foundation

U.S. Department of Energy

National Aeronautics and Space Administration

Army Research Office

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

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5. M. Cho, Z. Xu, M. Bakhtiary-Noodeh, H. Jeong, C-W. Tsou, T. Detchprohm, R-D Dupuis, and S-C. Shen, “Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method,” IEEE Trans. Electron Devices, vol. 68, no. 6, pp. 2759–2763, Jun. 2021, doi: 10.1109/TED.2021.3069153.

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