Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Published:2016-12 Issue: Volume:456 Page:137-139
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Piao Guanxi,Ikenaga Kazutada,Yano Yoshiki,Tokunaga Hiroki,Mishima Akira,Ban Yuzaburo,Tabuchi Toshiya,Matsumoto Koh

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Optical-Thermo-Transition Model of Reduction in On-Resistance of Small GaN p–n Diodes

2. High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

3. High performance GaN pin rectifiers grown on free-standing GaN substrates

4. Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

5. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

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1. Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN;Scientific Reports;2024-06-20

2. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals;Applied Physics Letters;2024-06-03

3. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers;Journal of Applied Physics;2024-05-08

4. GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices;physica status solidi (RRL) – Rapid Research Letters;2024-03-10

5. Recent Progress in III‐Nitride Tunnel Junction Light‐Emitting Diodes;physica status solidi (RRL) – Rapid Research Letters;2024-02-03

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