Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE
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Elsevier BV
Reference10 articles.
1. Nonpolar a-plane p-type GaN and p-n Junction Diodes
2. Growth of M-plane GaN(100) on γ-LiAlO
3. Growth of (101) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE
4. Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate
5. Optical spectra of (1‐101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate
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1. Novel Behaviors Related to III-Nitride Thin Film Growth;Springer Series in Materials Science;2018
2. Impact of acceptor concentration on the resistivity of Ni/Au p‐contacts on semipolar (20–21) GaN:Mg;physica status solidi (b);2015-10-12
3. Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach;Materials;2013-08-06
4. Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces;Semiconductor Science and Technology;2012-01-19
5. Stability of Carbon Incorpoated Semipolar GaN(1101) Surface;Japanese Journal of Applied Physics;2011-08-01
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