Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
Author:
Affiliation:
1. Institute of Solid State Physics; Technische Universität Berlin; Hardenbergstrasse 36 10623 Berlin Germany
2. Ferdinand-Braun-Institut; Leibniz-Institut für Höchstfrequenztechnik; Gustav-Kirchhoff-Strasse 4 12489 Berlin Germany
Funder
German Research Foundation
Alexander von Humboldt-Stiftung
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552407/fullpdf
Reference25 articles.
1. Strain-induced polarization in wurtzite III-nitride semipolar layers
2. High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
3. Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
4. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
5. Development of semipolar laser diode
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