Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Advances in group III-nitride-based deep UV light-emitting diode technology
3. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
4. Novel UV devices on high-quality AlGaN using grooved underlying layer
5. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
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