Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method-Reference-Cited by-同舟云学术

Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Published:2014-12 Issue: Volume:407 Page:31-36
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kivambe Maulid,Powell Douglas M.,Castellanos Sergio,Ann Jensen Mallory,Morishige Ashley E.,Nakajima Kazuo,Morishita Kohei,Murai Ryota,Buonassisi Tonio

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

NSF

Japan Science and Technology Agency (JST)

Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)

U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences

U.S. Department of Defense through the National Defense Science and Engineering Graduate Fellowship Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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4. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Appl. Phys. Lett.,2004

5. Silicon solar-cell processing for minimizing the influence of impurities and defects;Sopori;J. Electron. Mater.,2002

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