Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368378
Reference15 articles.
1. Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates
2. Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. II. Experimental results
3. Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy
4. A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon
5. Diffusion-limited lifetime in semiconductors
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