Growth of cubic SiC single crystals by the physical vapor transport technique-Reference-Cited by-同舟云学术

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Growth of cubic SiC single crystals by the physical vapor transport technique

Published:2007-10 Issue:2 Volume:308 Page:241-246
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Semmelroth K.,Krieger M.,Pensl G.,Nagasawa H.,Püsche R.,Hundhausen M.,Ley L.,Nerding M.,Strunk H.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Hall measurements as a function of temperature on monocrystalline SiC thin films

2. Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures

3. G. Pensl, M. Bassler, F. Ciobanu, V.V. Afanas’ev, H. Yano, T. Kimoto, H. Matsunami, in: Materials Research Society Symposium Proceedings, vol. 640, 2001, p. H3.2.1.

4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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