Modeling and Suppressing Interfacial Instability in Growth of SiC from High-Temperature Solutions-Reference-Cited by-同舟云学术

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Modeling and Suppressing Interfacial Instability in Growth of SiC from High-Temperature Solutions

Published:2025-01-30 Issue:4 Volume:25 Page:1211-1216
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Sheng Da¹²³,Wang Guobin¹²³⁴^ORCID,Yang Yunfan¹²³,Li Hui¹²³^ORCID,Guo Jian-gang¹²^ORCID,Wang Wenjun¹²³^ORCID,Chen Xiaolong¹²³⁵^ORCID

Affiliation:

1. Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics

2. Institute of Physics, Chinese Academy of Sciences

3. University of Chinese Academy of Sciences

4. Beijing Lattice Semiconductor Co., Ltd.

5. Songshan Lake Materials Laboratory

Funder

National Key Research and Development Program of China

Chinese Academy of Sciences

Beijing Municipal Science and Technology Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c01583

Reference28 articles.

1. Silicon Carbide as a Platform for Power Electronics

2. Material science and device physics in SiC technology for high-voltage power devices

3. SiC power devices for high voltage applications

4. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

5. Investigation of growth processes of ingots of silicon carbide single crystals

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1. Correlating Defect Structures and Optical Performance in Bridgman-Grown Cs₃Cu₂I₅ Crystals: A Defect Engineering Approach for Enhanced Blue Emission;Inorganic Chemistry;2025-05-28

2. Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (101¯2¯) Plane;Crystals;2025-05-16

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