Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode
Author:
Funder
National Research Foundation of Korea
Ministry of Science, ICT and Future Planning
Publisher
Elsevier BV
Subject
Nuclear Energy and Engineering
Reference22 articles.
1. Deep level defects in electron-irradiated 4H SiC epitaxial layers;Hemmingsson;J. Appl. Phys.,1997
2. Fundamentals of Silicon Carbide Technology;Kimoto,2014
3. Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation;Baek;Nucl. Eng. Technol.,2017
4. Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons;Baek;Radiat. Phys. Chem.,2021
5. Deep defect centers in silicon carbide monitored with deep level transient spectroscopy;Dalibor;Phys. Status Solidi,1997
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09
2. The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor;IEEE Sensors Journal;2024-06-01
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