The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor
Author:
Affiliation:
1. Department of Mechatronics Engineering, Engineering Faculty, Karabuk University, Karabuk, Turkey
2. Department of Electrical-Electronics Engineering, Engineering Faculty, Hakkari University, Hakkari, Turkey
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/7361/10546898/10506075.pdf?arnumber=10506075
Reference46 articles.
1. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles
2. A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures
3. Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
4. Self-powered MoS2/n-type GaN heterojunction photodetector with broad spectral response in ultraviolet–visible–near-infrared range
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