Gain improvement and microwave operation of 4H–SiC MESFET with a new recessed metal ring structure
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference31 articles.
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3. Two-stage ultrawide-band 5W power amplifier using SiC MESFET,;Sayed;IEEE Trans. Microwave Theory Tech.,2005
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1. An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET);Journal of Computational Electronics;2017-10-20
2. Creation of a new high voltage device with capable of enhancing driving current and breakdown voltage;Materials Science in Semiconductor Processing;2017-03
3. Symmetrical SOI MESFET with a dual cavity region (DCR-SOI MESFET) to promote high-voltage and radio-frequency performances;Superlattices and Microstructures;2016-10
4. A novel 4H–SiC MESFET with recessed gate and channel;Superlattices and Microstructures;2013-08
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