Creation of a new high voltage device with capable of enhancing driving current and breakdown voltage-Reference-Cited by-同舟云学术

Creation of a new high voltage device with capable of enhancing driving current and breakdown voltage

Published:2017-03 Issue: Volume:60 Page:60-65
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Anvarifard Mohammad K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

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5. Modeling of lightly doped drain and source graphene nanoribbon field effect transistors;Saremi;Superlattices Microstruct.,2013

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