Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD-Reference-Cited by-同舟云学术

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Published:2024-04 Issue: Volume:652 Page:159327
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Li Zeming,Jiao Teng^ORCID,Li Wancheng,Wang Zengjiang,Chang Yuchun^ORCID,Shen Rensheng,Liang Hongwei,Xia Xiaochuan,Zhong Guoqiang,Cheng Yu,Meng Fanlong,Dong Xin,Zhang Baolin,Ma Yan,Du Guotong

Funder

National Natural Science Foundation of China

Natural Science Foundation of Liaoning Province

Science and Technology Bureau, Guiyang Municipal Government

Publisher

Elsevier BV

Reference36 articles.

1. Review of gallium-oxide-based solar-blind ultraviolet photodetectors;Chen;Photonics Res.,2019

2. Recent progress in the growth of β-Ga2O3 for power electronics applications;Baldini;Mater. Sci. Semicond. Process.,2018

3. An overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application;Xue;Nanoscale Res Lett,2018

4. Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs;Jeong;Appl. Surf. Sci.,2021

5. High-voltage (2 01) β-Ga2O3 vertical schottky barrier diode with thermally-oxidized termination;Wang;IEEE Electron Device Lett.,2020

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

2. DUV optoelectronic bionic synapse based on the MOCVD-deposited amorphous gallium oxide film;Materials Letters;2024-05

3. Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application;Optical Materials;2024-04