An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application-Reference-Cited by-同舟云学术

An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Published:2018-09-19 Issue:1 Volume:13 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Xue HuiWen,He QiMing,Jian GuangZhong,Long ShiBing,Pang Tao,Liu Ming

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

the Key Research Program of Frontier Sciences of Chinese Academy of Sciences

the Beijing Municipal Science and Technology Project

the Opening Project of the Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-018-2712-1.pdf

Reference79 articles.

1. Baliga BJ (2010) Fundamentals of power semiconductor devices. Springer Science & Business Media, New York

2. Millán J, Godignon P, Perpiñà X, Pérez-Tomás A, Rebollo J (2014) A survey of wide bandgap power semiconductor devices. IEEE Trans Power Electron 29(5):2155–2163

3. Fujita S (2015) Wide-bandgap semiconductor materials: for their full bloom. Jpn J Appl Phys 54(3):030101

4. Higashiwaki M, Sasaki K, Kuramata A, Masui T, Yamakoshi S (2014) Development of gallium oxide power devices. Phys Status Solidi 211(1):21–26

5. Higashiwaki M, Sasaki K, Murakami H, Kumagai Y, Koukitu A, Kuramata A, Masui T, Yamakoshi S (2016) Recent progress in Ga2O3 power devices. Semicond Sci Technol 31(3):034001

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