X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface-Reference-Cited by-同舟云学术

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X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Published:2004-07 Issue:1-2 Volume:235 Page:21-25
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Vitchev R.G.,Pireaux J.J.,Conard T.,Bender H.,Wolstenholme J.,Defranoux Chr.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. D. Briggs, M.P. Seah (Eds.), Practical Surface Analysis: vol. 1—Auger and X-ray Photoelectron Spectroscopy, Wiley, Chichester, 1990.

2. Elastic Scattering Corrections in AES and XPS. II. Estimating Attenuation Lengths and Conditions Required for their Valid Use in Overlayer/Substrate Experiments

3. The electron attenuation length revisited

4. Influence of elastic-electron scattering on measurements of silicon dioxide film thicknesses by x-ray photoelectron spectroscopy

5. Ultrathin SiO2 on Si II. Issues in quantification of the oxide thickness

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