A theoretical study of the atomic layer deposition of HfO2 on Si(1 0 0) surfaces using tetrakis(ethylmethylamino) hafnium and water-Reference-Cited by-同舟云学术

A theoretical study of the atomic layer deposition of HfO2 on Si(1 0 0) surfaces using tetrakis(ethylmethylamino) hafnium and water

Published:2023-03 Issue: Volume:612 Page:155702
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ba Tai Truong,Son Jihoon^ORCID,Shin Hyeyoung^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference49 articles.

1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Miikkulainen;J. Appl. Phys.,2013

2. Status and prospects of Al2O3 -based surface passivation schemes for silicon solar cells;Dingemans;J. Vac. Sci. Technol. A Vacuum, Surfaces, Film.,2012

3. I. Shtepliuk, R. Yakimova, Special Issue “Fundamentals and Recent Advances in Epitaxial Graphene on SiC,” Appl. Sci. 11 (2021) 3381. https://doi.org/10.3390/app11083381.

4. Chemical structure of the interface in ultrathin HfO2/Si films;Lee;Appl. Phys. Lett.,2004

5. Applications of atomic layer deposition to nanofabrication and emerging nanodevices;Kim;Thin Solid Films.,2009

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1. Growth mechanism of HfO2 film on H-terminated Si (100) surface from atomic layer deposition process using tetrakis(ethylmethylamino)hafnium;Surfaces and Interfaces;2024-10

2. Initial precursor reaction mechanism of CVD-HfC coating based on density functional theory;Chinese Journal of Aeronautics;2024-07

3. Atomic layer deposition mechanism of hafnium dioxide using hafnium precursor with amino ligands and water;Surfaces and Interfaces;2024-01

4. Chemisorption and Surface Reaction of Hafnium Precursors on the Hydroxylated Si(100) Surface;Coatings;2023-12-16

5. Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO2 thin films on H-/OH-terminated Si (100) surfaces;Journal of Vacuum Science & Technology B;2023-09-28