The lateral diffusion of boron in polycrystalline silicon and its influence on the fabrication of sub-micron MOSTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Silicon gate technology
2. Electrical characteristics of boron diffused polycrystalline silicon layers
3. The electrical properties of polycrystalline silicon films
4. Diffusion of Impurities in Polycrystalline Silicon
5. Boron diffusion in polycrystalline silicon layers
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