Characterization of sub-micrometre silicon films (Si-LPCVD) heavilyin situboron-doped and submitted to treatments of dry oxidation-Reference-Cited by-同舟云学术

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Characterization of sub-micrometre silicon films (Si-LPCVD) heavilyin situboron-doped and submitted to treatments of dry oxidation

Published:2002-08-09 Issue:9 Volume:17 Page:983-992
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

A t-Kaki A,Boulakroune M,Boukezzata M,Berrabah M,Djahli F,Bellatreche M S,Bielle-Daspet D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Boron diffusion in polycrystalline silicon layers

2. The lateral diffusion of boron in polycrystalline silicon and its influence on the fabrication of sub-micron MOSTs

3. Study of a WSi2/polycrystalline silicon/monocrystalline silicon structure for a complementary metal‐oxide‐semiconductor for a compatible self‐aligned bipolar transistor emitter

4. Characteristics of p‐Doped Polysilicon with B 2 H 6 Used as In Situ Dopant Source

5. Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions

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1. Thermal Oxidation;Introduction to Microfabrication;2010-11-09

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