Measurements and Monte Carlo calculations of hydrogen and deuterium depth distributions into silicon carbide implanted in the energy range from 0.25 to 1.75 keV-Reference-Cited by-同舟云学术

Measurements and Monte Carlo calculations of hydrogen and deuterium depth distributions into silicon carbide implanted in the energy range from 0.25 to 1.75 keV

Published:1996-07 Issue:3-4 Volume:114 Page:203-207
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Leblanc L.,Ross G.G.

Publisher

Elsevier BV

Reference25 articles.

1. Ranges and variances of 0.2–1.0 keV hydrogen and deuterium ions implanted into Be, C and Si

2. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

3. Monte Carlo calculations of hydrogen and deuterium range distributions in light target materials

4. Sputtering studies with the Monte Carlo Program TRIM.SP

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