Ion implantation range distributions in silicon carbide

Abstract

The first to fourth order distribution moments, Rp, ΔRp, γ, and β, of 152 single energy H1, H2, Li7, B11, N14, O16, Al27, P31, Ga69, and As75 implantations into silicon carbide (SiC) have been assembled. Fifty of these implantations have been performed and analyzed in the present study while the remaining implantation data was compiled from the literature. For ions with a limited amount of experimental data, additional implantations were simulated using a recently developed binary collision approximation code for crystalline materials. Least squares fits of analytical functions to the distribution moments versus implantation energy provide the base for an empirical ion implantation simulator using Pearson frequency functions.