Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
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1. A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer;Microelectronics Reliability;2007-02
2. Hole Confinement and 1/fNoise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2006-05-09
3. Temperature Stability of Dynamic-Threshold Mode SiGe p-Metal–Oxide–Semiconductor Field Effect Transistors;Japanese Journal of Applied Physics;2005-12-08
4. Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 µm Complementary Metal Oxide Semiconductor Technology;Japanese Journal of Applied Physics;2005-09-26
5. Strained-SiGe Complementary MOSFETs Adopting Different Thickness of Silicon Cap Layers for Low Power and High Performance Applications;ETRI Journal;2005-08-09
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