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Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor

  • Published:2014-12-01 Issue:12 Volume:7 Page:124302
  • ISSN:1882-0778
  • Container-title:Applied Physics Express
  • language:
  • Short-container-title:Appl. Phys. Express

Author:

Gundapaneni Suresh,Goswami Aranya,Badami Oves,Cuduvally Ramya,Konar Aniruddha,Bajaj Mohit,Murali Kota V. R. M.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of HCI Effect and BTBT Supported High Ion/Ioff in Split Double-Gate Junctionless FETs;2024 Joint International Conference on Digital Arts, Media and Technology with ECTI Northern Section Conference on Electrical, Electronics, Computer and Telecommunications Engineering (ECTI DAMT & NCON);2024-01-31

2. Split-Gate Induced High-Field for Impact Ionization Triggered Bipolar Action and Sub-kT/q Switching in Junctionless FET;IEEE Transactions on Nanotechnology;2022

3. Physical Insights Into the Nature of Gate-Induced Drain Leakage in Ultrashort Channel Nanowire FETs;IEEE Transactions on Electron Devices;2017-06

4. Improvement of electrical performance in junctionless nanowire TFET using hetero-gate-dielectric;Materials Science in Semiconductor Processing;2017-06

5. Variation of Threshold Voltage With Temperature in Impact Ionization-Induced Steep Switching Si and Ge Junctionless MOSFETs;IEEE Transactions on Electron Devices;2017-05
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