Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=6/a=064102/pdf
Reference24 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
3. Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
4. N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
5. (Invited) Growth and Characterization of High Power AlInN/GaN HEMTs
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations;2023-09-06
2. A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier;Microelectronics Reliability;2023-06
3. Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
4. Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State;IEEE Transactions on Electron Devices;2022-12
5. Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG;IEEE Transactions on Electron Devices;2022-03
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