Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?-Reference-Cited by-同舟云学术

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Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Published:2006-12 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
Short-container-title:

Author:

Medjdoub F.,Carlin J.-F.,Gonschorek M.,Feltin E.,Py M.A.,Ducatteau D.,Gaquiere C.,Grandjean N.,Kohn E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154370.pdf?arnumber=4154370

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gallium nitride technologies for wireless communication;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications;Chinese Physics B;2023-11-01

3. Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate;Journal of Applied Physics;2023-10-09

4. Modulated Electric Field to Analyze Channel Coupling in InAlN/GaN Double-Channel HEMTs;2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT);2023-08-31

5. mm-Wave GaN-on-Si HEMTs with a P_SAT of 3.9W/mm at 28GHz;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

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