Channel Strain Measurement of Si1-xCxStructures: Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation-Reference-Cited by-同舟云学术

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Channel Strain Measurement of Si1-xCxStructures: Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation

Published:2013-06-01 Issue:6 Volume:6 Page:066601
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kim Sun-Wook,Byun Dae-Seop,Jung Mijin,Chopra Saurabh,Kim Yihwan,Kim Jae-Hyun,Han Seung-Min,Ko Dae-Hong,Lee Hoo-Jeong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=6/a=066601/pdf

Reference18 articles.

1. A 90-nm Logic Technology Featuring Strained-Silicon

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

3. Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

4. Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain distributions in carbon-doped silicon nanowires along [110] and [100] investigated by X-ray diffraction;Japanese Journal of Applied Physics;2023-12-18

2. Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers;Journal of Alloys and Compounds;2019-06

3. Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study;AIP Advances;2016-09

4. Highly strained channel with low-resistivity carbon-doped source/drain formed by cascade C7Hximplantation followed by rapid solid-phase epitaxy and laser annealing for n-channel metal–oxide–semiconductor field-effect transistor;Japanese Journal of Applied Physics;2015-02-06

5. Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates;Journal of Crystal Growth;2014-09

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