Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates-Reference-Cited by-同舟云学术

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Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates

Published:2014-09 Issue: Volume:401 Page:319-322
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim S.W.,Cho Y.D.,Shin C.S.,Park W.K.,Kim D.H.,Ko D.H.

Funder

R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

2. Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

3. GaAs epitaxy on Si substrates: modern status of research and engineering

4. Gallium arsenide and other compound semiconductors on silicon

5. Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

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1. Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy;Journal of the Korean Physical Society;2020-10

2. Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal–organic chemical vapor deposition;Applied Physics A;2018-03-12

3. Transmission Electron Microscopic Analysis of Micro-Twin;Korean Journal of Metals and Materials;2016-09-05

4. Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition;Applied Physics A;2016-05-11

5. Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates;Journal of Crystal Growth;2016-04

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