A Design and Comparative Investigation of Graded Al x Ga 1– x N EBL for W‐B 0.375 GaN/W‐B 0.45 GaN Edge Emitting Laser Diode on AlN Substrate-Reference-Cited by-同舟云学术

A Design and Comparative Investigation of Graded Al _x Ga _1– _x N EBL for W‐B _0.375 GaN/W‐B _0.45 GaN Edge Emitting Laser Diode on AlN Substrate

Published:2022-07 Issue:4 Volume:31 Page:683-689
ISSN:1022-4653
Container-title:Chinese Journal of Electronics
language:en
Short-container-title:Chinese J of Electronics

Author:

NIASS Mussaab I.¹,WANG Fang¹²,LIU Yuhuai¹²³⁴

Affiliation:

1. National Center for International Joint Research of Electronic Materials and SystemsInternational Joint‐Laboratory of Electronic Materials and Systems of Henan ProvinceSchool of Information EngineeringZhengzhou UniversityZhengzhou450001China

2. Zhengzhou Way Do Electronics Co. Ltd.Zhengzhou450001China

3. Research Institute of Industrial Technology Co. Ltd.Zhengzhou UniversityZhengzhou450001China

4. Institute of Materials and Systems for SustainabilityNagoya UniversityNagoyaAichi‐ken464‐8601Japan

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Applied Mathematics,Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/cje.2020.00.178

Reference20 articles.

1. Calculation of the band structure and band splitting energy of boron compounds (BX, X=N, P, As, Sb) using modified Becke‐Johnson potential;Sailo L.;IOSR‐JAP,2016

2. AlGaN photonics: recent advances in materials and ultraviolet devices

3. A Comparative Survey of Optical Wireless Technologies: Architectures and Applications

4. Light based underwater wireless communications;Oubei H. M.;Jpn. J. Appl. Physics,2018

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