Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability-Reference-Cited by-同舟云学术

Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability

Published:2024-08 Issue:8 Volume:71 Page:4740-4744
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tao Hongchang¹^ORCID,Xu Shengrui¹^ORCID,Bai Junchun¹,Zhang Tao¹^ORCID,Su Huake¹^ORCID,Zhang Yachao¹^ORCID,Liu Xu¹^ORCID,Gao Yuan¹,Zhang Jincheng¹^ORCID,Ding Ruixue²^ORCID,Hao Yue¹^ORCID

Affiliation:

1. State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Shaanxi Engineering Technology and Research Center of High-Power Semiconductor Lighting, School of Microelectronics, Xidian University, Xi’an, China

2. Key Laboratory of Analog Integrated Circuits and Systems of Ministry of Education, School of Microelectronics, Xidian University, Xi’an, China

Funder

Natural Science Basic Research Program of Shaanxi

National Key Research and Development Program of China

National Natural Science Foundation of China

State Key Laboratory on Integrated Optoelectronics

Fundamental Research Funds for the Central Universities

Innovation Fund of Xidian University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10552211.pdf?arnumber=10552211

Reference33 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

3. A Design and Comparative Investigation of Graded Al _x Ga _1– _x N EBL for W‐B _0.375 GaN/W‐B _0.45 GaN Edge Emitting Laser Diode on AlN Substrate

4. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

5. Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform