Laser recovery of grinding-induced subsurface damage in the edge and notch of a single-crystal silicon wafer
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation
Link
http://iopscience.iop.org/article/10.1088/2051-672X/aafe3c/pdf
Reference24 articles.
1. Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining;Yan;Precis. Eng.,2009
2. On the cracks self-healing mechanism at ductile mode cutting of silicon;Kovalchenko;Tribol. Int.,2014
3. Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon;Li;Mater. Des.,2017
4. Relationship between wafer edge design and its ultimate mechanical strength;Chen;Microelectron. Eng.,2010
5. Relationship between wafer fracture reduction and controlling during the edge manufacturing process;Chen;Microelectron. Eng.,2010
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