Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths-Reference-Cited by-同舟云学术

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Published:2017-01 Issue:1 Volume:26 Page:017805
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Li Xiang,Zhao De-Gang,Jiang De-Sheng,Yang Jing,Chen Ping,Liu Zong-Shun,Zhu Jian-Jun,Liu Wei,He Xiao-Guang,Li Xiao-Jing,Liang Feng,Liu Jian-Ping,Zhang Li-Qun,Yang Hui,Zhang Yuan-Tao,Du Guo-Tong,Long Heng,Li Mo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/26/1/017805/pdf

Reference25 articles.

1. Differential resistance of GaN-based laser diodes with and without polarization effect

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