Large enhancement of thermoelectric performance in MoS 2 / h -BN heterostructure due to vacancy-induced band hybridization

Author:

Wu Jing12ORCID,Liu Yanpeng234,Liu Yi25,Cai Yongqing6,Zhao Yunshan257,Ng Hong Kuan18,Watanabe Kenji9ORCID,Taniguchi Takashi9,Zhang Gang10,Qiu Cheng-Wei2511ORCID,Chi Dongzhi1,Neto A. H. Castro28,Thong John T. L.25,Loh Kian Ping2310,Hippalgaonkar Kedar1212ORCID

Affiliation:

1. Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore;

2. Centre for Advanced 2D Materials, National University of Singapore, 117546, Singapore;

3. Department of Chemistry, National University of Singapore, 117542, Singapore;

4. Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;

5. Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore;

6. Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China;

7. School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China;

8. Department of Physics, National University of Singapore, 117542, Singapore;

9. Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;

10. Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore;

11. Shenzhen University-National University of Singapore Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen, 518060, China;

12. Department of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore

Abstract

Significance The study of correlated phenomena in 2D semiconductors opens up new pathways toward understanding and engineering material functionalities (such as thermoelectrics) in easily accessible van der Waals solids. Local structural defects such as vacancies inevitably exist in natural as well as synthetic TMD crystals and have been predicted to serve as magnetic impurities capable of enhancing the strongly correlated effect. Herein we discover unusual thermoelectric behavior in sulfur vacancy-enriched MoS 2 by rationally selecting h -BN as the substrate. We demonstrate that the thermoelectric transport properties can be strongly manipulated by vacancy-induced Kondo hybridization. A significant enhancement of thermoelectric power factor by two orders of magnitude is achieved in the MoS 2 / h -BN device.

Funder

A*STAR | Science and Engineering Research Council

Publisher

Proceedings of the National Academy of Sciences

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