3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals

Author:

Chang Cheng1ORCID,Wu Minghui2,He Dongsheng2,Pei Yanling1,Wu Chao-Feng3,Wu Xuefeng2,Yu Hulei4ORCID,Zhu Fangyuan5,Wang Kedong2,Chen Yue4,Huang Li2,Li Jing-Feng3ORCID,He Jiaqing2ORCID,Zhao Li-Dong1ORCID

Affiliation:

1. School of Materials Science and Engineering, Beihang University, Beijing 100191, China.

2. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.

3. Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.

4. Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR, China.

5. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China.

Abstract

SnSe doped a different way Heat can be converted into electricity by thermoelectric materials. Such materials are promising for use in solid-state cooling devices. A challenge for developing efficient thermoelectric materials is to ensure high electrical but low thermal conductivity. Chang et al. found that bromine doping of tin selenide (SnSe) does just this by maintaining low thermal conductivity in the out-of-plane direction of this layered material. The result is a promising n-type thermoelectric material with electrons as the charge carriers—an important step for developing thermoelectric devices from SnSe. Science , this issue p. 778

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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