Anomalous pressure behavior of ZnSe Raman spectrum
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/08957950903339937
Reference17 articles.
1. Chapter 3 Structural Transitions in the Group IV, III-V, and II-VI Semiconductors under Pressure
2. Pressure-induced metallization of ZnSe
3. Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
4. Phonon dispersion of zinc chalcogenides under extreme pressure and the metallic transformation
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2. Structural and chemical disorder in semiconductors under pressure: Evidence in II–VI’s, role of photoactive defects, material predictions;Japanese Journal of Applied Physics;2017-04-10
3. Precipitation of anion inclusions and plasticity under hydrostatic pressure in II-VI crystals;Physical Review B;2016-10-06
4. Solution-based Ag-doped ZnSe thin films with tunable electrical and optical properties;Journal of Materials Chemistry C;2015
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